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FDMS6681Z MOSFET Transistor

The FDMS6681Z is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS6681Z transistor as follows.

Circuit diagram symbol of the FDMS6681Z transistor

FDMS6681Z Transistor Specification

Transistor Code FDMS6681Z
Transistor Type MOSFET
Control Channel Type P-Channel
Package POWER56
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 49A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0032Ohm
Power Dissipation (Maximum) PD 73W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 172nC

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