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FDMS4435BZ MOSFET Transistor

The FDMS4435BZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS4435BZ transistor as follows.

Circuit diagram symbol of the FDMS4435BZ transistor

FDMS4435BZ Transistor Specification

Transistor Code FDMS4435BZ
Transistor Type MOSFET
Control Channel Type P-Channel
Package POWER56
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 39W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 34nC

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