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FDMS3606AS MOSFET Transistor

The FDMS3606AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS3606AS transistor as follows.

Circuit diagram symbol of the FDMS3606AS transistor

FDMS3606AS Transistor Specification

Transistor Code FDMS3606AS
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWER56
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 2.2W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 21nC

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