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FDMS3600S MOSFET Transistor

The FDMS3600S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS3600S transistor as follows.

Circuit diagram symbol of the FDMS3600S transistor

FDMS3600S Transistor Specification

Transistor Code FDMS3600S
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWER56
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0056Ohm
Power Dissipation (Maximum) PD 2.2W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 19nC

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