FDMS3600AS MOSFET Transistor

The FDMS3600AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS3600AS transistor as follows.

FDMS3600AS Transistor Specification

Transistor Code		FDMS3600AS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0056Ohm
Power Dissipation (Maximum)	PD	2.2W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		19nC

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