FDMS3016DC MOSFET Transistor

The FDMS3016DC is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS3016DC transistor as follows.

FDMS3016DC Transistor Specification

Transistor Code		FDMS3016DC
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	60W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V

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