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FDME430NT MOSFET Transistor

The FDME430NT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDME430NT transistor as follows.

Circuit diagram symbol of the FDME430NT transistor

FDME430NT Transistor Specification

Transistor Code FDME430NT
Transistor Type MOSFET
Control Channel Type N-Channel
Package UMLP1.6X1.6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 2.1W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.5V

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