FDMC8676 MOSFET Transistor

The FDMC8676 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC8676 transistor as follows.

FDMC8676 Transistor Specification

Transistor Code		FDMC8676
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0059Ohm
Power Dissipation (Maximum)	PD	41W
Drain-Source Capacitance		760pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		3V

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