FDMC86570LET60 MOSFET Transistor

The FDMC86570LET60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC86570LET60 transistor as follows.

FDMC86570LET60 Transistor Specification

Transistor Code		FDMC86570LET60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	87A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0043Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		821pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6.2nS
Gate-Threshold Voltage (Maximum)		3V

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