FDMC86260 MOSFET Transistor

The FDMC86260 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC86260 transistor as follows.

FDMC86260 Transistor Specification

Transistor Code		FDMC86260
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.034Ohm
Power Dissipation (Maximum)	PD	54W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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