FDMC86259P MOSFET Transistor

The FDMC86259P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC86259P transistor as follows.

FDMC86259P Transistor Specification

Transistor Code		FDMC86259P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.107Ohm
Power Dissipation (Maximum)	PD	62W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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