FDMC86106LZ MOSFET Transistor

The FDMC86106LZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC86106LZ transistor as follows.

FDMC86106LZ Transistor Specification

Transistor Code		FDMC86106LZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.103Ohm
Power Dissipation (Maximum)	PD	19W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.2V

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