FDMC8026S MOSFET Transistor

The FDMC8026S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC8026S transistor as follows.

FDMC8026S Transistor Specification

Transistor Code		FDMC8026S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0044Ohm
Power Dissipation (Maximum)	PD	36W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		37nC

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