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FDMC8010ET30 MOSFET Transistor

The FDMC8010ET30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC8010ET30 transistor as follows.

Circuit diagram symbol of the FDMC8010ET30 transistor

FDMC8010ET30 Transistor Specification

Transistor Code FDMC8010ET30
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWER33
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 174A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0013Ohm
Power Dissipation (Maximum) PD 65W
Drain-Source Capacitance 1570pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 7.5nS
Gate-Threshold Voltage (Maximum) 2.5V

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