FDMC8010ET30 MOSFET Transistor

The FDMC8010ET30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC8010ET30 transistor as follows.

FDMC8010ET30 Transistor Specification

Transistor Code		FDMC8010ET30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	174A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0013Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		1570pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7.5nS
Gate-Threshold Voltage (Maximum)		2.5V

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