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FDMC8010 MOSFET Transistor

The FDMC8010 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC8010 transistor as follows.

Circuit diagram symbol of the FDMC8010 transistor

FDMC8010 Transistor Specification

Transistor Code FDMC8010
Transistor Type MOSFET
Control Channel Type N-Channel
Package PQFN3.3X3.3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0013Ohm
Power Dissipation (Maximum) PD 54W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 67nC

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