FDMC6688P MOSFET Transistor

The FDMC6688P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC6688P transistor as follows.

FDMC6688P Transistor Specification

Transistor Code		FDMC6688P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		678pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		1V

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