FDMC610P MOSFET Transistor

The FDMC610P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC610P transistor as follows.

FDMC610P Transistor Specification

Transistor Code		FDMC610P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	2.4W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		71nC

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