FDMA86108LZ MOSFET Transistor

The FDMA86108LZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMA86108LZ transistor as follows.

FDMA86108LZ Transistor Specification

Transistor Code		FDMA86108LZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MICROFET2X2
Transistor SMD Code		108
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.243Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		23pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		1.7nS
Gate-Threshold Voltage (Maximum)		3V

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