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FDMA1430JP MOSFET Transistor

The FDMA1430JP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMA1430JP transistor as follows.

Circuit diagram symbol of the FDMA1430JP transistor

FDMA1430JP Transistor Specification

Transistor Code FDMA1430JP
Transistor Type MOSFET
Control Channel Type P-Channel
Package MICROFET2X2
Transistor SMD Code 143
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 47pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4.4nS
Gate-Threshold Voltage (Maximum) 1V

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