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FDMA1025P MOSFET Transistor

The FDMA1025P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMA1025P transistor as follows.

Circuit diagram symbol of the FDMA1025P transistor

FDMA1025P Transistor Specification

Transistor Code FDMA1025P
Transistor Type MOSFET
Control Channel Type P-Channel
Package MICROFET
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.155Ohm
Power Dissipation (Maximum) PD 1.4W
Operating Junction Temperature (Maximum) 150°C

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