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FDM606P MOSFET Transistor

The FDM606P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDM606P transistor as follows.

Circuit diagram symbol of the FDM606P transistor

FDM606P Transistor Specification

Transistor Code FDM606P
Transistor Type MOSFET
Control Channel Type P-Channel
Package MICROFET3X2-8
Transistor SMD Code .06P
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 6.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 1.92W
Drain-Source Capacitance 350pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 46nS
Gate-Threshold Voltage (Maximum) 1.5V

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