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FDJ129P MOSFET Transistor

The FDJ129P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDJ129P transistor as follows.

Circuit diagram symbol of the FDJ129P transistor

FDJ129P Transistor Specification

Transistor Code FDJ129P
Transistor Type MOSFET
Control Channel Type P-Channel
Package SC75-6FLMP
Transistor SMD Code .A
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.07Ohm
Power Dissipation (Maximum) PD 1.6W
Drain-Source Capacitance 124pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 1.5V

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