FDI8442 MOSFET Transistor

The FDI8442 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDI8442 transistor as follows.

FDI8442 Transistor Specification

Transistor Code		FDI8442
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0029Ohm
Power Dissipation (Maximum)	PD	254W
Drain-Source Capacitance		1040pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		19.3nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		235nC

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