FDI8441 MOSFET Transistor

The FDI8441 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDI8441 transistor as follows.

FDI8441 Transistor Specification

Transistor Code		FDI8441
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262_I2PAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0027Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		215nC

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