FDI038AN06A0 MOSFET Transistor

The FDI038AN06A0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDI038AN06A0 transistor as follows.

FDI038AN06A0 Transistor Specification

Transistor Code		FDI038AN06A0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262_I2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0038Ohm
Power Dissipation (Maximum)	PD	310W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		96nC

UXPython is not the creator or an official representative of the FDI038AN06A0 MOSFET transistor. You can download the official FDI038AN06A0 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FDI8441_F085 MOSFET Transistor FDI3632 MOSFET Transistor FQI27N25 MOSFET Transistor FDI030N06 MOSFET Transistor FQI7N80 MOSFET Transistor HUF75639S3 MOSFET Transistor FCI25N60N MOSFET Transistor HUFA75344S3 MOSFET Transistor FQI5N60C MOSFET Transistor FQI27N25TU_F085 MOSFET Transistor FQI8N60C MOSFET Transistor FDI040N06 MOSFET Transistor FCI25N60N_F102 MOSFET Transistor FDI045N10A MOSFET Transistor FQI4N80 MOSFET Transistor FQI50N06 MOSFET Transistor FDI045N10A_F102 MOSFET Transistor FQI13N50C MOSFET Transistor FCI7N60 MOSFET Transistor FDI150N10 MOSFET Transistor