FDH50N50_F133 MOSFET Transistor

The FDH50N50_F133 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDH50N50_F133 transistor as follows.

FDH50N50_F133 Transistor Specification

Transistor Code		FDH50N50_F133
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	625W
Drain-Source Capacitance		760pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		360nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		137nC

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