FDH27N50 MOSFET Transistor

The FDH27N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDH27N50 transistor as follows.

FDH27N50 Transistor Specification

Transistor Code		FDH27N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	450W
Drain-Source Capacitance		409pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		54nS
Gate-Threshold Voltage (Maximum)		4V

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