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FDG6318P MOSFET Transistor

The FDG6318P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG6318P transistor as follows.

Circuit diagram symbol of the FDG6318P transistor

FDG6318P Transistor Specification

Transistor Code FDG6318P
Transistor Type MOSFET
Control Channel Type P-Channel
Package SC70
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 0.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.78Ohm
Power Dissipation (Maximum) PD 0.3W
Operating Junction Temperature (Maximum) 150°C

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