FDG6304P MOSFET Transistor

The FDG6304P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG6304P transistor as follows.

FDG6304P Transistor Specification

Transistor Code		FDG6304P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC706
Drain-Source Voltage (Maximum)	VDS	25V
Drain Current (Maximum)	ID	0.41A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	0.3W
Operating Junction Temperature (Maximum)		150°C

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