FDG6303N MOSFET Transistor

The FDG6303N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG6303N transistor as follows.

FDG6303N Transistor Specification

Transistor Code		FDG6303N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC706
Drain-Source Voltage (Maximum)	VDS	25V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	0.3W
Operating Junction Temperature (Maximum)		150°C

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