FDG6302P MOSFET Transistor

The FDG6302P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG6302P transistor as follows.

FDG6302P Transistor Specification

Transistor Code		FDG6302P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC706
Drain-Source Voltage (Maximum)	VDS	25V
Drain Current (Maximum)	ID	0.14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10Ohm
Power Dissipation (Maximum)	PD	0.3W
Operating Junction Temperature (Maximum)		150°C

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