FDG6301N MOSFET Transistor

The FDG6301N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG6301N transistor as follows.

FDG6301N Transistor Specification

Transistor Code		FDG6301N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC706
Drain-Source Voltage (Maximum)	VDS	25V
Drain Current (Maximum)	ID	0.22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	0.3W
Operating Junction Temperature (Maximum)		150°C

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