FDG361N MOSFET Transistor

The FDG361N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG361N transistor as follows.

FDG361N Transistor Specification

Transistor Code		FDG361N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC70-6
Transistor SMD Code		..61
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	0.42W
Drain-Source Capacitance		5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		4V

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