FDG313N MOSFET Transistor

The FDG313N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG313N transistor as follows.

FDG313N Transistor Specification

Transistor Code		FDG313N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC706
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.95A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	0.48W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.5V

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