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FDFME3N311ZT MOSFET Transistor

The FDFME3N311ZT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDFME3N311ZT transistor as follows.

Circuit diagram symbol of the FDFME3N311ZT transistor

FDFME3N311ZT Transistor Specification

Transistor Code FDFME3N311ZT
Transistor Type MOSFET
Control Channel Type N-Channel
Package MICROFET1.6X1.6THIN
Transistor SMD Code 1T
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 1.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.299Ohm
Power Dissipation (Maximum) PD 1.4W
Drain-Source Capacitance 15pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 1.5V

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