FDD8882 MOSFET Transistor

The FDD8882 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD8882 transistor as follows.

FDD8882 Transistor Specification

Transistor Code		FDD8882
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0115Ohm
Power Dissipation (Maximum)	PD	55W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		22nC

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