FDD8880 MOSFET Transistor

The FDD8880 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD8880 transistor as follows.

FDD8880 Transistor Specification

Transistor Code		FDD8880
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	58A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	55W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		23nC

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