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FDD8870_F085 MOSFET Transistor

The FDD8870_F085 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD8870_F085 transistor as follows.

Circuit diagram symbol of the FDD8870_F085 transistor

FDD8870_F085 Transistor Specification

Transistor Code FDD8870_F085
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252_DPAK
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 160A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0039Ohm
Power Dissipation (Maximum) PD 160W
Operating Junction Temperature (Maximum) 175°C
Total Gate Charge 91nC

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