FDD86102LZ MOSFET Transistor

The FDD86102LZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD86102LZ transistor as follows.

FDD86102LZ Transistor Specification

Transistor Code		FDD86102LZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0225Ohm
Power Dissipation (Maximum)	PD	54W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		18nC

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