FDD8586 MOSFET Transistor

The FDD8586 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD8586 transistor as follows.

FDD8586 Transistor Specification

Transistor Code		FDD8586
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	77W
Drain-Source Capacitance		550pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		2.5V

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