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FDD8580 MOSFET Transistor

The FDD8580 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD8580 transistor as follows.

Circuit diagram symbol of the FDD8580 transistor

FDD8580 Transistor Specification

Transistor Code FDD8580
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252AA
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 35A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 49.5W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 2.5V

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