FDD850N10LD MOSFET Transistor

The FDD850N10LD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD850N10LD transistor as follows.

FDD850N10LD Transistor Specification

Transistor Code		FDD850N10LD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	42W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.5V

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