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FDD7N60NZ MOSFET Transistor

The FDD7N60NZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD7N60NZ transistor as follows.

Circuit diagram symbol of the FDD7N60NZ transistor

FDD7N60NZ Transistor Specification

Transistor Code FDD7N60NZ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.25Ohm
Power Dissipation (Maximum) PD 90W
Operating Junction Temperature (Maximum) 150°C

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