FDD7N60NZ MOSFET Transistor

The FDD7N60NZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD7N60NZ transistor as follows.

FDD7N60NZ Transistor Specification

Transistor Code		FDD7N60NZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.25Ohm
Power Dissipation (Maximum)	PD	90W
Operating Junction Temperature (Maximum)		150°C

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