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FDD6796 MOSFET Transistor

The FDD6796 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6796 transistor as follows.

Circuit diagram symbol of the FDD6796 transistor

FDD6796 Transistor Specification

Transistor Code FDD6796
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0057Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 325pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 6nS
Gate-Threshold Voltage (Maximum) 3V

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