FDD6796 MOSFET Transistor

The FDD6796 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6796 transistor as follows.

FDD6796 Transistor Specification

Transistor Code		FDD6796
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0057Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3V

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