FDD6780 MOSFET Transistor

The FDD6780 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6780 transistor as follows.

FDD6780 Transistor Specification

Transistor Code		FDD6780
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	33W
Drain-Source Capacitance		225pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3V

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