FDD6770A MOSFET Transistor

The FDD6770A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6770A transistor as follows.

FDD6770A Transistor Specification

Transistor Code		FDD6770A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		33nC

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