FDD6688S MOSFET Transistor

The FDD6688S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6688S transistor as follows.

FDD6688S Transistor Specification

Transistor Code		FDD6688S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	88A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0051Ohm
Power Dissipation (Maximum)	PD	69W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		3V

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