FDD6670AL MOSFET Transistor

The FDD6670AL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6670AL transistor as follows.

FDD6670AL Transistor Specification

Transistor Code		FDD6670AL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	84A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		930pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		3V

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