FDD6635 MOSFET Transistor

The FDD6635 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6635 transistor as follows.

FDD6635 Transistor Specification

Transistor Code		FDD6635
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	35V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	59A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	55W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		26nC

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