FDD6632 MOSFET Transistor

The FDD6632 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6632 transistor as follows.

FDD6632 Transistor Specification

Transistor Code		FDD6632
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	15W
Drain-Source Capacitance		73pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		41nS
Gate-Threshold Voltage (Maximum)		3V

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